Polarization-resolved Er emission in Er doped GaN bulk crystals
نویسندگان
چکیده
منابع مشابه
Spectroscopic studies of Er-centers in MOCVD grown GaN layers highly doped with Er
We report on the high-resolution photoluminescence (PL) and electron spin resonance (ESR) studies of highly Er-doped (2× 1020 to × 1021 cm−3) MOCVD grown GaN epilayers. The high-resolution Fourier transform of the 4I → 4I PL of Er3+ near 1.5 m, site-selective 13/2 15/2 L and PL excitation measurements show that in MOCVD grown GaN only one type of Er-centers exists. This conclusion has been conf...
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The green (537 and 558 nm) and near infrared (1.54 mm) photoluminescence (PL) spectra of Er-doped GaN thin films have been investigated as a function of temperature, excitation wavelength, and pump intensity. Thermal quenching measurements showed that the 31 4 2 4 integrated green Er PL intensity ( S / H → I ) remained nearly constant up to 150 K, but decreased at higher temperatures 3 / 2 11 /...
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X-ray absorption measurements from relatively high concentrations of Er ~.0.1 at. %! doped in GaN films show that Er occupies the Ga site with an unprecedentedly short Er–N bond length. Electroluminescence intensities from these GaN:Er films correlate with the concentration of Er atoms that replace Ga, not with the abundantly present O impurities in the host. Simple chemical concepts are used t...
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A pumpand probe-beam technique is used for measuring time-resolved excited-state absorption (ESA) and stimulated-emission (SE) spectra of Er 3+ doped YA103. The Er 3+ 4115/2 --+ 4F7/2 transition of the sample is excited at 488 nm by an excimer laser pumped dye laser. The ESA and SE of broadband xenon ftashlamp light is monitored between 300 and 860 nm by an optical multichannel analyzer (OMA). ...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2020
ISSN: 0021-8979,1089-7550
DOI: 10.1063/5.0012969